| 摘要 |
<p>A nonvolatile semiconductor memory device and its manufacturing method are provided to reduce resistance of a word line, a string select line, a ground select line, and a common source line by using a metal for use in them. A string select line(SL) and a ground select line(GL) are located on a substrate. Plural word lines(WL) are located between the string select line and the ground select line. A first contact body is located at a side of the string select line. A common source line(128) is located at a side of the ground select line. A second contact body(139) is located on an upper surface of the first contact body. A bit line(140) is connected to an upper surface of the second contact body. Upper surfaces of the string select line, the ground select line, the word line, the common source line, and the first contact body have the same height.</p> |
