| 摘要 |
There is provided a semiconductor device which comprises a trench formed in the first insulating film, a metal wiring buried in the trench and having a fluorine concentration on a surface which is lower than an oxygen concentration, a fluorine-noncontaining insulating film formed on the metal wiring, a second fluorine-containing insulating film formed on the metal wiring, holes formed at least in a lower portion of the second fluorine-containing insulating film and the fluorine-noncontaining insulating film on the first metal wiring, and metal plugs buried in the holes. |
