| 摘要 |
PROBLEM TO BE SOLVED: To provide a fine work method whose number of processes is smaller than a conventional lift-off method and which can form a thin film pattern having sufficient adhesiveness with a substrate, to provide a fine work structure having a patterned worked thin film which is superior in adhesiveness with the substrate, to provide a fine work method for manufacturing an organic transistor superior in mobility and, to provide an electronic device. SOLUTION: The fine work method sequentially performs a process for forming a resist film 2 on the substrate 1, a process for pattern-exposing the resist film 2, a process for forming the worked thin film 4 on the resist film 2 without performing development, and a process for lifting-off a non-exposure part 2b of the resist film 2 and the worked thin film 4 on the part 2b. An exposed resist pattern 2a is interposed between the patterned worked thin film 4a and the substrate 1. COPYRIGHT: (C)2007,JPO&INPIT |
