| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which influence of a sneak current at reading can be excluded, and the area of a reference cell array can be reduced. <P>SOLUTION: The device is provided with a memory cell array 47ma and a reference cell array 47ra in which a plurality of reference cells being reference when information is read are arranged. In the memory cell array 47ma, memory cells 47m1 to 47m8 arranged in the row direction are connected in series electrically and form a series memory cell group. In the reference cell array 47ra, reference cells 47r1 to 47r3 arranged in the row direction are connected in series electrically and form a series reference cell group. Information is sent to a sense amplifier 42 with a virtual ground system. The number of reference cells forming the series reference cell group is less than the number of memory cells forming the series memory cell group. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
