| 摘要 |
PROBLEM TO BE SOLVED: To provide a MOS semiconductor device capable of reducing switching loss by reducing gate capacitance and lowering ON-resistance by reducing drift resistance. SOLUTION: The MOS semiconductor device includes: a first conductive drift layer serving as a semiconductor substrate; a second conductive well region formed on the surface of the drift layer; and a first conductive source region provided on the surface layer of the second conductive well region. It has a plurality of trenches passing from the surface of the first conductive source region through the second conductive well region to reach the first conductive drift layer. The MOS semiconductor device includes a trench gate structure where conductive gate electrodes formed in the plurality of trenches respectively through a gate insulating film are extended among the plurality of trenches and connected with one another. COPYRIGHT: (C)2007,JPO&INPIT
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