发明名称 |
Methods of forming charge-trapping dielectric layers for semiconductor memory devices |
摘要 |
Methods of forming charge-trapping dielectric layer structures in semiconductor memory devices which comprise: (a) providing a semiconductor substrate; (b) forming an oxide layer on at least a portion of the substrate; (c) forming two or more source/drain regions in the substrate below the oxide layer; (d) re-oxidizing the oxide layer; (e) forming a charge-trapping dielectric layer on the oxide layer; and (f) forming an insulating layer on the charge-trapping dielectric layer; as well as methods which comprise: (a) providing a semiconductor substrate; (b) forming an oxide layer on at least a portion of the substrate in a dry atmosphere; (c) forming two or more source/drain regions in the substrate below the oxide layer; (d) forming a charge-trapping dielectric layer on the oxide layer; (e) forming an insulating layer on the charge-trapping dielectric layer; and (f) annealing the insulating layer in an atmosphere having a hydrogen content of less than about 0.01% are described.
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申请公布号 |
US2007054449(A1) |
申请公布日期 |
2007.03.08 |
申请号 |
US20050209875 |
申请日期 |
2005.08.23 |
申请人 |
MACRONIX INTERNATIONAL CO. LTD. |
发明人 |
SHIH YEN-HAO;LEE SHIH-CHIN;HSIEH JUNG-YU;LAI ERH-KUN;HSIEH KUANG Y. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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