| 摘要 |
A semiconductor device is provided which includes a pair of metal interconnections (B, C) provided above a semiconductor substrate ( 10 ), a program layer ( 20 ) provided over the pair of metal interconnections (B, C) and in which an opening ( 21 ) may be selectively formed in the program layer ( 20 ) on the basis of programming information, and a read circuit ( 40 ) reading the programming information by determining whether such an opening ( 21 ) is formed in the program layer ( 20 ) by utilizing an electrostatic capacitance between the pair of metal interconnections (B, C). The program layer ( 20 ) may be made of a material having a dielectric constant higher than that of air or the program layer ( 20 ) may be made of a conductor or a material having a dielectric constant lower than that of air. Thus, trimming information or information on a device identification (ID) can be stored, even if the semiconductor device is a logic device that does not have a memory transistor, by detecting the information that is determined by the electrostatic capacitance that varies depending on whether or not there is provided an opening ( 21 ).
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