| 摘要 |
Example embodiments relate to a multilayer gate electrode, a semiconductor device having the same and methods of fabricating the same. Other example embodiments relate to a semiconductor device with a multilayer gate electrode which is relatively stable at higher temperatures, has improved resistance characteristics and improved reliability, and methods of fabricating the same. The multilayer gate electrode may include a polycrystalline semiconductor layer on the gate insulating layer and doped with conductive type impurities, an ohmic contact layer on the polycrystalline semiconductor layer and including tungsten (W<SUB>1-x</SUB>) and non-tungsten metal (M<SUB>x</SUB>, x=about 0.01 to about 0.55), a metal barrier layer on the ohmic contact layer and a refractory metal layer on the metal barrier layer. The semiconductor device including a conductive type transistor may include a semiconductor substrate, a conductive type source/drain region in the semiconductor substrate, a gate insulating layer on a channel region between the source/drain regions and the multilayer gate electrode.
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