发明名称 Power semiconductor module for inverter etc., has connection points for low and high potentials in sequence that corresponds to that of external connection terminals on two bus rails
摘要 <p>At least four substrates (41-44) are arranged in a row on a carrier board (40). Components (414,415) on each individual substrate are connected to form an electrical half-bridge. For each individual substrate, the sequence of connection points for the low and high potentials corresponds exactly to a sequence of external connection terminals (10,20) on two bus rails (1,2) in the direction of the row of substrates.</p>
申请公布号 DE102006004031(B3) 申请公布日期 2007.03.08
申请号 DE20061004031 申请日期 2006.01.27
申请人 INFINEON TECHNOLOGIES AG 发明人 SCHILLING, OLIVER;WOELZ, MARTIN
分类号 H01L25/07;H01L23/498;H02M1/00 主分类号 H01L25/07
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