| 摘要 |
<p>A photo diode is formed on a silicon substrate and comprises a light receiving region, an intermediate region, a contact region, a shield layer, and an electrode. The light receiving region is formed on the surface of the silicon substrate and includes a diffusion region of a first conduction type forming a pn-junction. The intermediate region includes a diffusion region of the first conduction type so formed on the surface of the silicon substrate as to be included in the light receiving region. The contact region includes a diffusion region of the first conduction type so formed on the surface of the silicon substrate as to be included in the intermediate region. The shield layer includes a diffusion region of a second conduction type formed outside the intermediate region on the surface of the silicon substrate. The electrode is in contact with the contact region. The shield region faces a side edge of the diffusion region constituting the intermediate region.</p> |
