METHOD OF MANUFACTURING SOLID STATE IMAGING DEVICE, SOLID STATE IMAGING DEVICE, AND CAMERA USING SOLID STATE IMAGING DEVICE

摘要

A method for manufacturing a solid state image pickup device, the solid state image pickup device manufactured thereby and a camera using the same are provided to reduce remarkably the thickness of a light shielding layer by separating completely the light shielding layer from a transparent layer using an anti-oxidation passivation layer. A light shielding material layer(16) is formed on a semiconductor substrate with a photoelectric transformation array and a transfer electrode array. An opening corresponding to a photoelectric transformation part(12) is formed on the light shielding material layer by performing an etching process on the resultant structure using an etch mask. An anti-oxidation passivation layer(34) is formed on the photoelectric transformation part and the light shielding layer. A transparent layer(26,28) is formed on the anti-oxidation passivation layer.