| 摘要 |
A method for manufacturing a semiconductor device is provided to improve a breakdown voltage of a capacitor dielectric film on a doped region and obtain a high quality capacitor by using a beam current of 1 muA to 3 mA. A doped region is formed in a semiconductor substrate(1) by performing an ion implantation in a predetermined beam current range of 1 muA to 3 mA. A capacitor dielectric film(25) is formed on the doped region of the semiconductor substrate. A capacitor upper electrode(30b) is formed on the capacitor dielectric film. The ion implantation is performed by using As ions in an injection energy range of 50 to 70 keV.
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