| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce an I/O region, and further to reduce the area of the semiconductor device. <P>SOLUTION: In forming with an interlayer film 22 made thicker, a part of or the entire electrode pad 11 is drawn out into an active region 16. So an I/O region 15 is reduced, resulting in a reduced area of the semiconductor device. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
