| 摘要 |
PROBLEM TO BE SOLVED: To provide a polishing pad capable of CMP processing using a cleaning slurry containing no abrasives and dressing the pad surface by solving the problem in the prior art that the wafer scratch is readily generated, because individual abrasive grains are bonded with a binder in the primary grain state and the surface of the pad cannot be dressed, requiring the frequently change of the pad in the CMP process. SOLUTION: The polishing pad 10 is composed of particles containing abrasive grains 16 consisting of aggregated adhesive grains 12 and a binder resin 14, and a polyurethane resin 18. COPYRIGHT: (C)2007,JPO&INPIT
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