| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film gas sensor not generating a problem between a Pt sensing film electrode and an SnO<SB>2</SB>gas sensing film even in long-term pulse driving; and also to provide its manufacturing device. SOLUTION: In this thin-film gas sensor, at least thin-film heaters H are formed on support films L1-L3 (called as a diaphragm structure) comprising a silicon oxide and/or a silicon nitride or the like, stretched in the covering state of one end of a through hole in an Si substrate B, and having the fringe fixed to the Si substrate; and the SnO<SB>2</SB>gas sensing film S having a pair of the Pt sensing film electrodes E is formed on an insulating film L4 for coating the heaters H. In the sensor, an alloy intermediate layer I comprising Sn-Pt is provided between each Pt sensing film electrode and the SnO<SB>2</SB>gas sensing film. COPYRIGHT: (C)2007,JPO&INPIT
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