| 摘要 |
A data recording apparatus includes a recording medium which includes a semiconductor substrate, a first insulating layer formed on one surface of the substrate, a second insulating layer formed on the first insulating layer and is made to accumulate electric charge, an electrode layer formed on the other surface, and an insulating area which penetrates the insulating layers; and an electrode which applies a voltage to the medium. A depth from an interface between the substrate and the first insulating layer to the bottom of the insulating area is more than a maximum depth of a depletion layer, W<SUB>max </SUB>represented by <?in-line-formulae description="In-line Formulae" end="lead"?>W<SUB>max</SUB>=√{square root over (2epsilon<SUB>0</SUB>epsilon<SUB>i</SUB>x2|phi<SUB>f</SUB>|/qN<SUB>d</SUB>)}<?in-line-formulae description="In-line Formulae" end="tail"?> where epsilon<SUB>0</SUB>, epsilon<SUB>i</SUB>, |phi<SUB>f</SUB>|, q, and N<SUB>d </SUB>are a dielectric constant of vacuum, a relative dielectric constant, an absolute value of the Felmi potential of the substrate, an electric charge of an electron, and an impurity concentration of the substrate, respectively.
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