CHEMICAL VAPOR DEPOSITION SYSTEM HAVING DUAL SUBSTRATE

摘要

A CVD apparatus having a dual substrate is provided to easily control the impurities generated in growing a thin film by preparing substrates on the upper and the lower surface of an inner path of a heating body through which material and diluent gases flow. A quartz pipe(310) is prepared as a reaction chamber for growing a thin film by an RF induction heating. An RF coil(320) for RF induction heating is installed on the outer circumferential surface of the quartz pipe. A heating body(330) supports and fixes a substrate for growing a thin film, supplying a path through which material and diluent gases(360) for CVD pass and inductively heated by the RF coil. An adiabatic material(340) blocks the heat generated from the heating body from the outside, installed between the inner circumferential surface of the quartz pipe and the heating body. Substrates(350a,350b) for growing a silicon carbide epitaxial thin film are formed on the upper and the lower surfaces of an inner path(330h) of the heating body. The adiabatic material doesn't come in contact with the inner wall of the quartz pipe so that mixture gas of the material gas and the diluent gas can flow to the inner path of the heating body and a space between the inner wall of the quartz pipe and the outer wall of the heating body.