| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using nitride based III-V compound semiconductors, which has longer operating life by making the crystallinity of a optical wave guide to be good, and particularly, in a semiconductor laser, has a high symmetry of light intensity distribution in a far field pattern and a reduced aspect ratio of a radiation angle, and to provide its manufacturing method. <P>SOLUTION: The semiconductor light emitting device is composed by sequentially laminating an n-type AlGaN cladding layer 5, an n-type GaN light wave guide layer 6, an active layer 7 made of InGaN, an undoped GaN light wave guide layer 17, a p-type AlGaN cap layer 9, a p-type AlGaN/GaN superlattice cladding layer 18, and a p-type GaN contact layer 12. <P>COPYRIGHT: (C)2007,JPO&INPIT |
