SUBSTRATE FOR DEPOSITING GROUP III NITRIDE, MANUFACTURING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a substrate for depositing group III nitride, a manufacturing method thereof, and a semiconductor device using the same where an AlN thin film is made to be comparatively thin and formed without getting nebula and where cracks and pits at a III group nitride film layer constituting a device element grown on the AlN thin film are reduced.

SOLUTION: The substrate 10 for depositing the group III nitride includes a base material 11 and the AlN thin film 12 as a buffer layer formed on the base material, and has a semiconductor device made of the group III nitride film formed thereon. The substrate 10 is constituted so that the AlN film may be deposited by a plurality of steps by changing a depositing condition at least once in the middle of the deposition.

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