| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron source device and an imaging device provided with this device having high performance, and having a high degree of freedom of design, because of without a depletion layer. <P>SOLUTION: This electron source device 10 has a first insulator 7, a plurality of mutually parallel emitter lines 2 formed on the first insulator 7, a plurality of mutually parallel gate electrodes 4 formed on the emitter lines 2 via an insulating layer 3 and orthogonal to the emitter lines 2, a second insulator 6 arranged between the mutual emitter lines 2 and contacting with the first insulator 7 and the insulating layer 3, and a segment 8 arranged in a place for crossing the emitter lines 2 with the gate electrodes 4. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
