| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device, in which a read current difference before and after write can be enlarged; and also to provide its manufacturing method and information rewriting method. SOLUTION: The semiconductor memory device 100 comprises a first dispersion region 11, a gate insulating film 32, a gate electrode 31, a first multilayer film 141, and a third dispersion region 113. The gate insulating film 32 is formed on a semiconductor substrate 10 at a position away from the first dispersion region 11. The gate electrode 31 is formed on the gate insulating film 32. The first multilayer film 141 is formed on the semiconductor substrate 10 between the first dispersion region 11 and the gate insulating film 32. The third dispersion region 113 is formed near the first multilayer film 141 on the semiconductor substrate 10. In the third dispersion region 113, an impurity concentration is lower than that in the first dispersion region 11. Positive charges (holes) are mainly accumulated in the first multilayer film 141, negative charges (electrons) are then mainly accumulated and writing is performed thereon. COPYRIGHT: (C)2007,JPO&INPIT
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