发明名称 |
Semiconductor device and method for manufacturing the same |
摘要 |
In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO<SUB>2 </SUB>from being formed.
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申请公布号 |
US2007052042(A1) |
申请公布日期 |
2007.03.08 |
申请号 |
US20040551843 |
申请日期 |
2004.03.31 |
申请人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;WAKAMATSU HIDETOSHI;KOBAYASHI YASUO |
发明人 |
OHMI TADAHIRO;TERAMOTO AKINOBU;WAKAMATSU HIDETOSHI;KOBAYASHI YASUO |
分类号 |
H01L29/94;H01L21/04;H01L21/28;H01L21/318;H01L21/8238;H01L29/51;H01L29/78 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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