VOLTAGE RANDOM ACCESS MEMORY (VRAM)

摘要

An integrated circuit memory cell and voltage ladder design that adapts techniques typically applied to Static Random Access Memory (SRAM) circuits to implement a compact array of analog Voltage Random Access Memory (VRAM) locations. The memory cells in the VRAM each store a digital value that controls a corresponding switch. The switch couple a particular voltage from a set of voltages generated by the ladder, to be output when that location is enabled. Multiple analog output voltages are provided by simply providing additional rows of cells.