METHOD OF FORMING A PHASE CHANGEABLE MATERIAL LAYER, AND METHODS OF MANUFACTURING A PHASE CHANGEABLE MEMORY UNIT AND A PHASE CHANGEABLE MEMORY DEVICE USING THE SAME

摘要

A method for forming a phase change material layer, a phase change memory unit using the same and a method for manufacturing a phase change memory device are provided to control easily a compositional rate of the phase change material layer and to form quickly the phase change material layer in a low temperature by using a variety of source gases. A first material layer is formed on an object body by supplying a first source gas containing a first material into a reaction chamber(S20). A first composite material layer containing the first material and a second material is formed on the object body by supplying a second source gas containing the second material into the reaction chamber(S40). A third material layer is formed on the first composite material layer by supplying a third source gas containing a third material into the reaction chamber(S60). A second composite material layer containing the third material and a fourth material is formed on the first composite material layer by supplying a fourth source gas containing the fourth material into the reaction chamber(S80).