| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device that improves electrical characteristics by maintaining the emission property and decreasing the influence of interface charge in an interface where two different semiconductor layers lie adjacent to each other. <P>SOLUTION: This semiconductor light emitting device 101 is produced in a way that the concentration of impurity near an interface where two semiconductor layers with different compositions lie adjacent to each other becomes higher than the average concentration of impurity in the respective semiconductor layers. In a hetero interface between the adjacent layers of group III nitride compounds, an interface charge arises for intrinsic polarization or piezoelectric polarization. If an impurity is added to reduce the influence of this interface charge, the impurity absorbs light, the active layer deteriorates for impurity diffusion and consequently the life of the semiconductor light emitting device shortens. In contrast, this semiconductor light emitting device with group III nitride compounds stacked solves a trade-off problem between electrical characteristic improvements and emission properties such as luminous efficiency and life. <P>COPYRIGHT: (C)2007,JPO&INPIT |
