| 摘要 |
Provided are a nonvolatile memory device having multi bit storage and a method of manufacturing the same. The method includes forming a tunneling dielectric layer, a charge storage layer and a charge blocking layer on a fin-active region, forming sacrificial patterns having a groove to open a crossing region of the active region on the charge blocking layer, selectively removing portions of the charge blocking layer, the charge storage layer and the tunneling dielectric layer exposed by the opening groove using the sacrificial layer patterns as an etch mask to expose a top surface and side surfaces of the active region, forming a gate dielectric layer on exposed portion of the active region to cover exposed side surfaces of the of charge storage layer, forming a first gate on the gate dielectric layer to fill the groove, removing the sacrificial layer patterns, forming second gates on side surfaces of the first gate, forming isolated local charge storage patterns, charge blocking patterns and tunneling dielectric patterns by selectively removing exposed portions of the charge blocking layer, the charge storage layer and the tunneling dielectric layer, and forming a source/drain region on the active region.
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