| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a positive resist composition which can be suitably used when ArF excimer laser light is used as an exposure light source, excels in line edge roughness, and causes neither pattern collapse nor problem of development defects, and a pattern forming method using the same, and to further provide a positive resist composition excellent in pattern profile and exposure latitude and a pattern forming method using the same. <P>SOLUTION: The positive resist composition contains (A) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, (B) a resin which is decomposed by the action of an acid to increase its solubility in an alkali developer, and (C) a low-molecular compound having a specific lactone structure. The pattern forming method using the positive resist composition is also provided. <P>COPYRIGHT: (C)2007,JPO&INPIT |
