| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device having an ion-conductive layer, and to provide the manufacturing and operation methods of the non-volatile semiconductor memory device. <P>SOLUTION: In the non-volatile memory device, having a substrate, a switching element formed on the substrate, and a storage node connected to the switching element, and the manufacturing and operation methods of the non-volatile memory device, the storage node comprises a lower electrode that is connected to the switching element and is used as an ion source; a data storage layer formed on the lower electrode and is partially separated from the lower electrode; a side electrode whose side is connected to the data storage layer section separated from the lower electrode while being separated from the lower electrode; and an upper electrode formed on the data storage layer. <P>COPYRIGHT: (C)2007,JPO&INPIT |
