| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a dry etching method and a manufacturing method of a photo mask which improves dimensional variation of patterns. <P>SOLUTION: The dry etching method has processes to arrange an etching object having multilayer film in vacuum, to introduce a reactant gas into the vacuum, to generate plasma of the reactant gas, and to sequentially etch the multilayer. Between the etching of a film (3) of the n-th layer (n is two or more natural number) counted from the upper layer film side and the etching of a film (2) of the (n+1)th layer, the tapered portion of the film of the n-th layer is selectively removed without virtually changing the pattern dimension of the film (4) of the (n-1)th layer. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
