发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an increasing speed while assuring the improvement of yield of products and reliability. SOLUTION: The semiconductor integrated circuit device having a main circuit comprising MOSFET and a substrate bias circuit for supplying positive bias voltage to a semiconductor region in which the MOSFET is formed, is provided with a current limiting circuit for limiting current being supplied to the semiconductor region in response to a substrate current flowing between the semiconductor region where the MOSFET is formed and the source. COPYRIGHT: (C)2007,JPO&INPIT
|
申请公布号 |
JP2007060722(A) |
申请公布日期 |
2007.03.08 |
申请号 |
JP20060316669 |
申请日期 |
2006.11.24 |
申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
MIYAZAKI SUKEYUKI;ISHIBASHI KOICHIRO;ONO TAKEKAZU |
分类号 |
H03K19/094;H01L21/822;H01L27/04;H03K19/096 |
主分类号 |
H03K19/094 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|