发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an increasing speed while assuring the improvement of yield of products and reliability. SOLUTION: The semiconductor integrated circuit device having a main circuit comprising MOSFET and a substrate bias circuit for supplying positive bias voltage to a semiconductor region in which the MOSFET is formed, is provided with a current limiting circuit for limiting current being supplied to the semiconductor region in response to a substrate current flowing between the semiconductor region where the MOSFET is formed and the source. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007060722(A) 申请公布日期 2007.03.08
申请号 JP20060316669 申请日期 2006.11.24
申请人 RENESAS TECHNOLOGY CORP 发明人 MIYAZAKI SUKEYUKI;ISHIBASHI KOICHIRO;ONO TAKEKAZU
分类号 H03K19/094;H01L21/822;H01L27/04;H03K19/096 主分类号 H03K19/094
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