发明名称 MANUFACTURING APPARATUS OF GROUP III NITRIDE CRYSTAL, GROUP III NITRIDE CRYSTAL CONTAINING Al, AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing apparatus for preventing damage even if a group III nitride containing an Al element is produced. SOLUTION: A first reaction tube 1 is formed of a substance having fully small reactivity to AlCl such as sapphire. First and second reaction zones are heated to 1,000°C and 1,200°C, respectively. HCl and NH<SB>3</SB>are supplied to a first reaction tube 1 and a second one 2, respectively. HCl reacts with solid Al that is a solid source 8 in the first reaction tube 1 to generate AlCl gas. The inner surface of the first reaction tube 1 is formed of sapphire to prevent reaction with AlCl. AlCl is sent to a second reaction zone. An NH<SB>3</SB>gas flow is present in the second reaction tube 2 so that the first reaction tube 1 is surrounded. Thus, AlCl immediately reacts with NH<SB>3</SB>near a region RE, thus generating gas AlN. Since AlCl is consumed entirely, it hardly reacts with quartz even if the second reaction tube 2 is made of quartz. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007059771(A) 申请公布日期 2007.03.08
申请号 JP20050245576 申请日期 2005.08.26
申请人 MIE UNIV;NGK INSULATORS LTD 发明人 HIRAMATSU KAZUMASA;MIYAKE HIDETO;SHIBATA TOMOHIKO
分类号 H01L21/205;C23C16/34;C23C16/455;C30B29/38 主分类号 H01L21/205
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