| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state imaging device, that not only reduces the internal stress or distortion of a semiconductor substrate but also ensures high-precision treatment on a thin-film semiconductor substrate surface. SOLUTION: The features of this imaging device are that each semiconductor chip 13 is produced from a wafer, in a way that its size is equal to that of each imaging device, and a support layer 19 for maintaining mechanical strength is employed to cover one surface 131a at a device formation side other than the other surface 131b, serving as an optical incidence side for the photoelectric conversion element 15 of this semiconductor chip 13, a peripheral side 131c of a silicon layer 131 corresponding to the periphery side of the semiconductor chip 13, and a peripheral side 132c of a wiring layer 132 in units of semiconductor chips 13. COPYRIGHT: (C)2007,JPO&INPIT
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