发明名称 ELECTRIC DISCHARGE RETAINING METHOD FOR SPUTTERING PROCESS
摘要 PROBLEM TO BE SOLVED: To solve the problem in the conventional sputtering film deposition system that electric discharge isapt to extinguished by repeating film deposition. SOLUTION: In a reactive sputtering film deposition system where the inside of the same chamber is provided with a plurality of targets, also, at least one of them is a transition element target, and further, at least one among the plurality of targets is a metal target requiring hydrogenation for producing a fluoride thin film of low absorption, when discharge is performed using the metal target requiring hydrogenation, the transition element target and electrode parts at the circumferences thereof have been covered with a material different from the transition element, thus the discharge stability in the transition element target is retained. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007056292(A) 申请公布日期 2007.03.08
申请号 JP20050241067 申请日期 2005.08.23
申请人 CANON INC 发明人 FUKUI SHINJI
分类号 C23C14/34;C23C14/38;G02B1/11 主分类号 C23C14/34
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