| 摘要 |
A method of forming III-V epitaxy on a germanium-on-insulator (GOI) substrate having a bonded layer and a handle substrate begins with measuring a lattice parameter of the bonded layer at a first temperature. The lattice parameter of the bonded layer, which is a function of a coefficient of thermal expansion (CTE) of the handle substrate, is then calculated at an epitaxial growth temperature. An epitaxial composition is selected from a class of III-V material for epitaxial growth overlying the bonded layer, wherein the selected epitaxial composition is adjusted to have a lattice parameter that approximates the calculated lattice parameter of the bonded layer at the epitaxial growth temperature. An epitaxial layer can then be grown over the bonded layer with use of the adjusted epitaxial composition, producing a substantially defect-free III-V epitaxial layer. Furthermore, an improved defectivity is claimed when the epitaxial layer's CTE is approximately similar to that of the handle substrate.
|
