| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a polishing method to detect the film thickness of the surface to be polished on the real-time basis without dislocating a top ring to outside a turntable while a semiconductor wafer remains mounted on the top ring. <P>SOLUTION: The polishing method to polish the surface of an object works with a polishing device having the turntable 1 rotating and the top ring 3 rotating independently of the turntable 1, whereby polishing is performed in such an arrangement that the object furnished with an oxide film and held by the top ring 3 is pressed to the polishing surface of the turntable 1, in which further a film thickness measuring sensor S consisting of a light projecting part 7 and a light receiving part 8 installed inside the turntable 1 is mounted on a track where the center of the object polished lies, for sensing the temporal change of the oxide film thickness at a plurality of points on the polished surface having different radii, to serve for controlling the polishing profile of the polished surface under polishing using a back side pressure of the top ring 3. <P>COPYRIGHT: (C)2007,JPO&INPIT |
