| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having an improved breakdown voltage characteristic, and a manufacturing method thereof. SOLUTION: This semiconductor device 1 comprises a semiconductor substrate 11, a pair of low concentration diffusion regions 17s and 17d formed in the surface of the semiconductor substrate 11, a gate insulating film 13 formed on the surface of the semiconductor substrate 11, and a gate electrode 15 formed on the surface of the semiconductor substrate 11 via the gate insulating film 13. The side face on the drain (17d) side of the gate electrode 15 has interdigital electrodes 15a including a first side face parallel to the gate widthwise direction, a second side face projecting in the gate lengthwise direction from the first side face, and third side faces connecting the first side face and the second side face at both ends of the second side face. COPYRIGHT: (C)2007,JPO&INPIT
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