| 摘要 |
PROBLEM TO BE SOLVED: To provide a novel method for manufacturing a boride single crystal that has better crystallinity than that obtained with the prior art, by a floating zone method; and to provide a substrate that is made by the manufacturing method and is suitable for epitaxial growth of a semiconductor layer, particularly a GaN-based semiconductor layer. SOLUTION: In the method for manufacturing the boride single crystal, an initial melt region 9 formed from an ingredient powder including an excessive content of boron compared to a stoichiometric composition of the boride is provided at one end in the longitudinal direction of a feed rod 6 formed from an ingredient powder containing boron and a metallic element that constitute the boride, then the initial melt region 9 is heated to melt so as to form a molten zone, and the molten zone is moved toward the other end of the feed rod 6 along the longitudinal direction, so as to grow the boride single crystal in a region of the feed rod 6 where the molten zone has passed by the floating zone method. The substrate comprises a boride single crystal manufactured by the manufacturing method. COPYRIGHT: (C)2007,JPO&INPIT
|
