METHOD FOR PRODUCING SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To provide a method for producing a single crystal where a single crystal film whose thickness variation is little and which has superior surface flatness can be produced on a substrate by liquid phase epitaxial growth. SOLUTION: A plurality of raw materials are supplied in a crucible 2. The substrate 7 is dipped in a solution 9 in which a plurality of the raw materials are dissolved. When the single crystal film is grown on the surface of the substrate by a liquid phase epitaxial method, a shielding plate 10 to suppress the upward movement of crystal particles 9a generated in the solution 9 is placed lower than the height of the substrate 7 dipped in the solution 9. The method for producing the single crystal where the single crystal film is grown on the surface of the substrate 7 is provided. COPYRIGHT: (C)2007,JPO&INPIT