| 摘要 |
A transistor structure such as a FinFET is formed in a semiconductor substrate with a surface contour having an upper surface at least partially bounded by sidewalls of trenches in the semiconductor substrate. First and second source/drain regions are arranged along the upper surface of the surface contour, with a recess structure between the first and second source/drain regions. The recess structure extends further into the semiconductor substrate than the first and second source/drain regions such that a channel within the semiconductor substrate between the first and second source/drain regions extends around the recess structure. The effective length of the channel is a function of the depth of the recess structure. A gate electrode is arranged along at least one of the sidewalls adjacent the channel. The effective channel width is a function of the depth to which the gate electrode is formed.
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