METHOD OF MANUFACTURING SILICON TOPOLOGICAL CAPACITORS
摘要
<p>In accordance with the present invention, a novel method to fabricate topological capacitors is provided. The fabrication method of the instant invention is based upon a reversed surface topology utilizing deep reactive ion etching to establish conductive capacitive elements and non-conductive capacitive element groups.</p>
申请公布号
WO2007027169(A2)
申请公布日期
2007.03.08
申请号
WO2005US30715
申请日期
2005.08.30
申请人
UNIVERSITY OF SOUTH FLORIDA;ONISHI, SHINZO;LANGEBRAKE, L.C.
