| 摘要 |
The invention relates to a device for depositing especially crystalline layers on at least one especially crystalline substrate in a process chamber (1) comprising a top (2) and a vertically opposing heated bottom (3) for receiving the substrates (4). A gas-admittance body (5) forming vertically superimposed gas-admittance regions (6, 7) is used to separately introduce at least one first and one second gaseous starting material, said starting materials flowing through the process chamber (1) with a carrier gas in the horizontal direction. The gas flow homogenises in an admittance region (FZ) directly adjacent to the gas-admittance body (5), and the starting materials are at least partially decomposed, forming decomposition products which are deposited on the substrates (4) in a growth region (GZ) adjacent to the admittance region (EZ), under continuous depletion of the gas flow. An additional gas-admittance region (8) of the gas-admittance body (5) is essential for one of the two starting materials, in order to reduce the horizontal extension of the admittance region (EZ). ® KIPO & WIPO 2007
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