| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technology capable of enhancing the performance of a semiconductor device. <P>SOLUTION: N-type impurities such a phosphorus or p-type impurities such as boron are introduced into a semiconductor substrate, i.e. a wafer 25. The wafer 25 is then irradiated with an incident laser beam 6 from the back 25a side thus activating the impurities in the wafer 25. The incident laser beam 6 consists of a plurality of pulse laser beams 1 and 2 superimposed while shifting the irradiation timing for the wafer 25. When the impurities are activated using such an incident laser beam 6, the wafer 25 can be irradiated with the laser beam for a long time while suppressing fusion of the wafer 25. As a result, performance of a semiconductor device is enhanced. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
