发明名称 THIN FILM SURFACE ACOUSTIC WAVE DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a thin film surface acoustic wave device for which a volume is reduced even when it is the thin film surface acoustic wave device having a plurality of excitation electrodes compared with a conventional thin film surface acoustic wave device having a single excitation electrode. SOLUTION: This thin film surface acoustic wave device 10 comprises a plurality of thin film surface acoustic wave elements 5 and 6 provided with piezoelectric body thin films 12 and 21 formed on one surface of substrates 11 and 20, and the excitation electrodes 19 and 22 formed on the piezoelectric thin films 12 and 21 for exciting surface acoustic waves; and an external connection electrode 26 formed on the other surface of the substrate 11 which is a surface different from the one where the piezoelectric body thin film 12 is formed of the thin film surface acoustic wave element 6. For the thin film surface acoustic wave elements 5 and 6, the excitation electrodes 19 and 22 face each other with an air gap and they are joined by a joining part 25 formed so as to be tightly sealed. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007060465(A) 申请公布日期 2007.03.08
申请号 JP20050245357 申请日期 2005.08.26
申请人 SEIKO EPSON CORP 发明人 FURUHATA MAKOTO;YAJIMA ARITSUGU
分类号 H03H9/25 主分类号 H03H9/25
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