| 摘要 |
PROBLEM TO BE SOLVED: To provide a wiring structure and a producing method thereof, which eliminates lateral growth of a metal cap, and can properly control the selective growth of the metal cap. SOLUTION: A via and a trench in a dielectric layer 30 is filled with copper 50', having a top surface which is lower than that of the dielectric layer 30 so as to form a damascene structure, having a recessed copper portion 52 in its upper portion. On the recessed copper portion 52, a metal cap 54 made of metal cobalt, cobalt tungsten, a cobalt tungsten phosphorus compound, or cobalt tungsten boride is formed. COPYRIGHT: (C)2007,JPO&INPIT
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