SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device forming a gate electrode comprising a metal silicide and a stressor film covering this gate electrode without complicating manufacturing processes, and to provide its manufacturing method. SOLUTION: A semiconductor device has: an N-type MISFET having a source/drain region 38 formed in a semiconductor substrate 10 with a channel region between and a gate electrode 44 comprising a metal silicide formed on the channel region through a gate insulating film 12; and an insulating film 46 formed over the upper surface from the sidewall of the gate electrode 44 to include the gate electrode 44 and having a tensile stress of 1 GPa to 2 GPa to apply the tensile stress to the channel region. COPYRIGHT: (C)2007,JPO&INPIT