| 摘要 |
The present invention provides, in one aspect, provides a method of manufacturing a microelectronics device 100 that includes depositing a first gate dielectric layer 160 over a substrate 115 , subjecting the first gate dielectric layer 160 to a first nitridation process, forming a second gate dielectric layer 165 over the substrate 115 and having a thickness less than a thickness of the first gate dielectric layer 160 , and subjecting the first and second gate dielectric layers 160, 165 to a second nitridation process, wherein the first and second nitridation processes are different. The present invention also provides a microelectronics device 100 fabricated in accordance with the method.
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