Light-Emitting Device

摘要

There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is mu, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs_(max), a channel width is W, a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is DeltaVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that $A=\frac{2\mathrm{Id}}{\mathrm{mu}*C_0}$ $\frac{A}{{\left({\mathrm{Vgs}}_{\left(\max \right)}-\mathrm{Vth}\right)}^2}<=\frac{W}{L}<={\left(\sqrt{1+\frac{n}{100}}-1\right)}^2*\frac{A}{\mathrm{Delta}{\mathrm{Vth}}^2}$ $\mathrm{Delta}\mathrm{Vth}<=\left(\sqrt{1+\frac{n}{100}}-1\right)*\sqrt{A*L/W}$