SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device is provided with a groove section (11) formed on a semiconductor substrate (10); first ONO films (18) arranged on both side planes of the groove section (11); and first word lines (22) arranged on side planes of the first ONO films (18) and extend in the longitudinal direction of the groove section (11). A method for manufacturing such semiconductor device is also provided. By the semiconductor device and the method for manufacturing the same, high storage capacity can be achieved.