METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device is provided to guarantee a uniform doping region in a channel region of a pin active region by a plasma doping process. A semiconductor substrate(101) is selectively etched to form a pin active region(102). A plasma diffusion process is performed on the pin active region to carry out a channel doping process. A tilted beam-line ion implantation process is performed on the pin active region. A gate insulation layer(107) is grown on the surface of the pin active region, thicker on the sidewall of the pin active region than on the upper surface of the pin active region.