| 摘要 |
A CMOS image sensor is provided to irradiate more light to a micro lens by avoiding deterioration of an optical characteristic generated by refraction or reflection of light wherein the refraction or reflection happens by a difference of refractivity between a micro lens protection layer and air. A photodiode(31) is formed in a substrate(30). A micro lens(38) is formed on the photodiode, aligned with the photodiode. A sub layer(40) is formed on the micro lens, having an intermediate index of refraction between those of the micro lens and the air. The sub layer comes in contact with the air, made of a porous low dielectric layer. A protection layer for protecting the micro lens is formed along the surface of the micro lens between the micro lens and the sub layer.
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